Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1552141-1552147

  Wagner, Mt ^a   Thinh, N Q ^a   Son, N T ^a   Chen, W M ^a   Janzen E ^a   Baranov, P G ^b   Mokhov, E N ^b   Hallin, C ^c   Lindstrom J L ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b IOFFE INSTITUTE   (Russian Federation)

^c ABB CORPORATE RESEARCH   (Sweden)

^d LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON;

ARTICLE; CONCENTRATION (PARAMETERS); EXCITATION; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; MEASUREMENT; MOLECULAR INTERACTION; QUANTUM MECHANICS;

EID: 0038195883     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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