Thermal stability of irradiation-induced point defects in cubic silicon carbide

Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

  Lef̀vre, J́ŕmie ^a   Costantini, Jean Marc ^b   Esnouf, St́phane ^a,c   Petite, Guillaume ^a  

^a LABORATOIRE DES SOLIDES IRRADIÉS   (France)

^b SRMA   (France)

^c CNRS UMR 3299   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC SILICON CARBIDE; DEFECT MODEL; HIGH TEMPERATURE TREATMENTS; HIGH THERMAL STABILITY; INTERSTITIALS; IRRADIATION PROCESS; PL INTENSITY; POLYTYPES; SUB-LATTICES; THERMAL STABILITY; THRESHOLD DISPLACEMENT ENERGY;

ACTIVATION ENERGY; DEFECTS; ELECTRON IRRADIATION; MODEL CHECKING; PHOTOLUMINESCENCE SPECTROSCOPY; POINT DEFECTS; SILICON CARBIDE; THERMODYNAMIC STABILITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350741041     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3245397     Document Type: Article

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