Annealing of vacancy-related defects in semi-insulating SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 20, 2004, Pages

  Gerstmann, U ^a   Rauls, E ^a   Overhof, H ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

ARTICLE; CORRELATION ANALYSIS; ELECTRICAL CONDUCTIVITY PARAMETERS; TEMPERATURE;

EID: 42749107540     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.201204     Document Type: Article

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18. Note that this discrepancy even increases when using plain LDA instead of SIC-OEP, since the isotropic part áof the hf splitting, would be increased by a factor of 1.5 in LDA.