Electron paramagnetic resonance study of the HEI4/SI5 center in 4H-SiC

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 543-546

  Umeda, T ^a   Son, N T ^b   Isoya, J ^a   Morishita, N ^c   Ohshima, T ^c   Itoh, H ^c   Janzen E ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Deep level; Defect; EPR; Semi insulating SiC

Indexed keywords

DEFECTS; ELECTRON IRRADIATION; ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; PARAMAGNETIC RESONANCE; PARAMAGNETISM;

DEEP LEVEL; ELECTRON PARAMAGNETIC RESONANCES (EPR); ELECTRONIC LEVELS; HIGH INTENSITY; HYPERFINE STRUCTURE; NEGATIVE CHARGE; SEMI-INSULATING; SIC SUBSTRATES;

SILICON CARBIDE;

EID: 38049087234     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.543     Document Type: Conference Paper

References (7)

1. We here use conventional notations such as "SI5" or "HEI1 (alphabets + number), instead of the original labels ("SI-5" or "HEI1", respectively).
2. N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, and E. Janzén: Mat. Sci. Forum Vols. 457-460 (2004), p. 437.
3. U. Gerstmann, E. Rauls, and H. Overhof: Phys. Rev. B Vol. 70 (2004), p. 201204(R).
4. T. Umeda, Y. Ishitsuka, J. Isoya, N.T. Son, E. Janzén, N. Morishita, T. Ohshima, H. Itoh, and A. Gali: Phys. Rev. B Vol. 71 (2005), p. 193202.
5. M. Bockstedte, A. Gali, T. Umeda, N.T. Son, J. Isoya, and E. Janzén: these Proceedings.
6. N. Mizuochi et al.: Phys. Rev. B Vol. 68 (2003), p. 165206;
7. Phys. Rev. B Vol. 66 (2002), p. 235202.