Transport physics and device modeling of zinc oxide thin-film transistors part I: Long-channel devices

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2610-2619

  Torricelli, Fabrizio ^a   Meijboom, Juliaan R ^b   Smits, Edsger ^c   Tripathi, Ashutosh K ^c   Ferroni, Matteo ^d   Federici, Stefania ^d   Gelinck, Gerwin H ^c   Colalongo, Luigi ^d   Kovacs Vajna, Zsolt M ^d   De Leeuw, Dago ^b   Cantatore, Eugenio ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c HOLST CENTRE   (Netherlands)

^d UNIVERSITY OF BRESCIA   (Italy)

Author keywords

Field effect mobility; multiple trapping and release (MTR) transport; numerical simulation; physical based analytical model; thin film transistor (TFT); zinc oxide (ZnO)

Indexed keywords

ACTIVE LAYER; ANALYTICAL MODELING; CHANNEL LENGTH; DC MODEL; DENSITY OF STATE; DEVICE MODELING; FIELD-EFFECT MOBILITIES; LONG CHANNEL DEVICES; MULTIPLE-TRAPPING-AND-RELEASE (MTR) TRANSPORT; PHYSICAL-BASED ANALYTICAL MODEL; SATURATION REGION; SUBTHRESHOLD; TRANSPORT MECHANISM; TRANSPORT PHYSICS; ZNO;

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC PROPERTIES; EXPERIMENTS; SEMICONDUCTING ORGANIC COMPOUNDS; SPRAY PYROLYSIS; THIN FILM TRANSISTORS; TRANSISTORS; TRANSPORT PROPERTIES; ZINC; ZINC OXIDE;

SEMICONDUCTOR DEVICE MODELS;

EID: 79960840586     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2155910     Document Type: Article

References (38)

1. R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, Feb. 2003.
2. P. F. Carcia, R. S. McLean,M. H. Reilly, and G. Nunes, "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering," Appl. Phys. Lett., vol. 82, no. 7, pp. 1117-1119, Feb. 2003.
3. Y. Ohya, T. Niwa, T. Ban, and Y. Takahashi, "Thin film transistor of ZnO fabricated by chemical solution deposition," Jpn. J. Appl. Phys., vol. 40, no. 1, pp. 297-298, Jan. 2001. (Pubitemid 32277369)
4. Y. J. Chang, D. H. Lee, G. S. Herman, and C. H. Chang, "Highperformance, spin-coated zinc tin oxide thin-film transistors," Electrochem. Solid-State Lett., vol. 10, no. 5, pp. H135-H138, Feb. 2007.
5. O. A. Fouad, A. A. Ismail, Z. I. Zaki, and R. M. Mohamed, "Zinc oxide thin films prepared by thermal evaporation deposition and its photocatalytic activity," Appl. Catal. B: Environ., vol. 62, no. 1/2, pp. 144-149, Sep. 2006. (Pubitemid 41814623)
6. T. Prasada Rao and M. C. Santhoshkumar, "Highly oriented (1 0 0) ZnO thin films by spray pyrolysis," Appl. Surf. Sci., vol. 255, no. 16, pp. 7212-7215, May 2009.
7. T. Hirao, M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa, "Bottom-gate zinc oxide thin-film transistors (ZnO TFTs) for AM-LCDs," IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3136-3142, Nov. 2008.
8. H. Nanto, H. Sokooshi, and T. Kawai, "Aluminum-doped ZnO thin film gas sensor capable of detecting freshness of sea foods," Sens. Actuators B, Chem., vol. 14, no. 1-3, pp. 715-717, Jun. 1993. (Pubitemid 23711631)
9. Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, "Recent advances in ZnO-based light-emitting diodes," IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 26-41, Jan. 2010.
10. K.W. Liu, Y. D. Tang, C. X. Cong, T. C. Sum, A. C. H. Huan, Z. X. Shen, L. Wang, F. Y. Jiang, X. W. Sun, and H. D. Sun, "Giant enhancement of top emission from ZnO thin film by nanopatterned Pt," Appl. Phys. Lett., vol. 94, no. 15, pp. 151 102/1-151 102/3, Apr. 2009.
11. J. Cembrero, A. Elmanouni, B. Hartiti, M. Mollar, and B. Marí, "Nanocolumnar ZnO films for photovoltaic applications," Thin Solid Films, vol. 451/452, pp. 198-202, Mar. 2004.
12. S. Benagli, D. Borrello, E. Vallat-Sauvain, J. Meier, U. Kroll, J. Hoetzel, J. Bailat, J. Steinhauser, M. Marmelo, G. Monteduro, and L. Castens, "High-efficiency amorphous silicon devices on LPCVD-ZnO TCO prepared in industrial Kaitm-M R&D reactor," in Proc. 24th Eur. Photovolt. Sol. Energy Conf., Hamburg, Germany, Sep. 21-25, 2009, pp. 2293-2298.
13. E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, F. C. Krebs, E. Guziewicz, M. Godlewski, V. Osinniy, and G. Luka, "Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications," Appl. Phys. Lett., vol. 94, no. 14, pp. 143 501/1-143 501/3, Apr. 2009.
14. S. Masuda, K. Kitamura, Y. Okumura, and S. Miyatake, "Transparent thin film transistors using ZnO as an active channel layer and their electrical properties," J. Appl. Phys., vol. 93, no. 3, pp. 1624-1630, Feb. 2003.
15. E. Fortunato, A. Pimentel, L. Pereira, A. Gonçalves, G. Lavareda, H. Águas, I. Ferreira, C. N. Carvalho, and R. Martins, "High field-effect mobility zinc oxide thin film transistors produced at room temperature," J. Non-Cryst. Solids, vol. 338-340, pp. 806-809, Jun. 2004.
16. A. Ashour, M. A. Kaid, N. Z. El-Sayed, and A. A. Ibrahim, "Physical properties of ZnO thin films deposited by spray pyrolysis technique," Appl. Surf. Sci., vol. 252, no. 22, pp. 7844-7848, Sep. 2006. (Pubitemid 44376488)
17. J. Jo, O. Seo, H. Choi, and B. Lee, "Enhancement-mode ZnO thin-film transistor grown by metalorganic chemical vapor deposition," Appl. Phys. Exp., vol. 1, no. 4, pp. 041 202/1-041 202/3, Apr. 2008.
18. A. Bashir, P. H. Wöbkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, and T. D. Anthopoulos, "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere," Adv. Mater., vol. 21, no. 21, pp. 2226-2231, Jun. 2009.
19. F. M. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, H. Fujioka, H. Ohno, H. Koinuma, and M. Kawasaki, "Modeling and simulation of polycrystalline ZnO thin-film transistors," J. Appl. Phys., vol. 94, no. 12, pp. 7768-7777, Oct. 2003.
20. B. Iñiguez, R. Picos, D. Veksler, A. Koudymov, M. S. Shur, T. Ytterdal, and W. Jackson, "Universal compact model for long-and short-channel thin-film transistors," Solid State Electron., vol. 52, no. 3, pp. 400-405, Mar. 2008. (Pubitemid 351232970)
21. I. Horcas, R. Fernández, J. M. Gómez-Rodríguez, J. Colchero, J. Gómez-Herrero, and A. M. Baro, "WSXM: A software for scanning probe microscopy and a tool for nanotechnology," Rev. Sci. Instrum., vol. 78, no. 1, pp. 013 705/1-013 705/8, Jan. 2007.
22. R. Romero, D. Leinen, E. A. Dalchiele, J. R. Ramos-Barrado, and F. Martín, "The effects of zinc acetate and zinc chloride precursors on the preferred crystalline orientation of ZnO and Al-doped ZnO thin films obtained by spray pyrolysis," Thin Solid Films, vol. 515, no. 4, pp. 1942-1949, Dec. 2006. (Pubitemid 44716183)
23. R. Navamathavan, C. K. Choi, E. J. Yang, J. H. Lim, D. K. Hwang, and S. J. Park, "Fabrication and characterization of ZnO thin film transistors prepared by using radio frequency magnetron sputtering," Solid State Electron., vol. 52, no. 5, pp. 813-816, May 2008.
24. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doan, V. Avrutin, S.-J. Cho, and H. Morkoç, "A comprehensive review of ZnO materials and devices," J. Appl. Phys., vol. 98, no. 4, pp. 41 301-41 404, Aug. 2005.
25. E. J. Meijer, C. Tanase, P.W. M. Blom, E. van Veenendaal, B. H. Huisman, D. M. de Leeuw, and T.M. Klapwijk, "Switch-on voltage in disordered organic field-effect transistors," Appl. Phys. Lett., vol. 80, no. 20, pp. 3838-3840, May 2002.
26. C. Tanase, E. J. Meijer, P.W. M. Blom, and D. M. de Leeuw, "Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes," Phys. Rev. Lett., vol. 91, no. 21, pp. 216 601-216 604, Nov. 2003.
27. L. Colalongo, "A new analytical model for amorphous-silicon thin-film transistor including tail and deep states," Solid State Electron., vol. 45, no. 9, pp. 1525-1530, Sep. 2001. (Pubitemid 32820913)
28. T. J. King, M. G. Hack, and I. W. Wu, "Effective density-of-states distributions for accurate modeling of polycrystalline-silicon thin-film transistors," J. Appl. Phys., vol. 75, no. 2, pp. 908-913, Jan. 1994.
29. M. Shur and M. Hack, "Physics of amorphous silicon based alloy field-effect transistors," J. Appl. Phys., vol. 55, no. 10, pp. 3831-3842, Jan. 1984. (Pubitemid 14607731)
30. M. C. J. M. Vissenberg and M. Matters, "Theory of the field-effect mobility in amorphous organic transistors," Phys. Rev. B, Condens. Matter, vol. 57, no. 20, pp. 12 964-12 967, May 1998. (Pubitemid 128481420)
31. J. Robertson, "Disorder and instability processes in amorphous conducting oxides," Phys. Stat. Sol. (B), vol. 245, no. 6, pp. 1026-1032, Apr. 2008.
32. S. S. Chen and J. B. Kuo, "An analytical a-Si:H TFT DC/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states," IEEE Trans. Electron Devices, vol. 41, no. 7, pp. 1169-1178, Jul. 1994.
33. M. Valdinoci, L. Colalongo, G. Baccarani, A. Pecora, I. Policicchio, G. Fortunato, F. Plais, P. Legagneux, C. Reita, and D. Pribat, "Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions," Solid State Electron., vol. 41, no. 9, pp. 1363-1369, Sep. 1997. (Pubitemid 127428921)
34. C. Chen, K. Abe, H. Kumomi, and J. Kanicki, "Density of states of a-InGaZnO from temperature-dependent field-effect studies," IEEE Trans. Electron Devices, vol. 56, no. 6, pp. 1177-1182, Jun. 2009.
35. F. Torricelli, E. C. P. Smits, J. R. Meijboom, A. K. Tripathi, G. H. Gelinck, L. Colalongo, Z. M. Kovacs-Vajna, D. M. de Leeuw, and E. Cantatore, "Transport physics and device modeling of zinc oxide thin film transistors-Part II: Contact resistance in short channel devices," IEEE Trans. Electron Devices, submitted for publication.
36. P. Servati, A. Nathan, and G. A. Amaratunga, "Generalized transport-band field-effect mobility in disordered organic and inorganic semiconductors," Phys. Rev. B, Condens. Matter, vol. 74, no. 24, pp. 245 210-245 217, Dec. 2006.
37. G. T. Wright, "Theory of the space-charge-limited surface-channel dielectric triode," Solid State Electron., vol. 7, no. 2, pp. 167-175, Feb. 1964.
38. A. Cerdeira, M. Estrada, R. García, A. Ortiz-Conde, and F. J. García Sánchez, "New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions," Solid State Electron., vol. 45, no. 7, pp. 1077-1080, Jul. 2001. (Pubitemid 32768014)