Transport physics and device modeling of zinc oxide thin-film transistors - Part II: Contact resistance in short channel devices

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 3025-3033

  Torricelli, Fabrizio ^a   Smits, Edsger C P ^b   Meijboom, Juliaan R ^c   Tripathi, Ashutosh K ^b   Gelinck, Gerwin H ^b   Colalongo, Luigi ^d   Kovács Vajna, Zsolt M ^d   De Leeuw, Dago M ^c   Cantatore, Eugenio ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b HOLST CENTRE   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d UNIVERSITY OF BRESCIA   (Italy)

Author keywords

Activation energy; analytical model; bottom contact thin film transistors (TFT); contact resistance; device simulation; field effect mobility; zinc oxide (ZnO)

Indexed keywords

ANALYTICAL MODEL; BIAS CONDITIONS; BOTTOM CONTACT THIN-FILM TRANSISTORS (TFT); CHANNEL LENGTH; CIRCUIT SIMULATORS; CONTACT REGIONS; DEVICE MODELING; DEVICE SIMULATIONS; EXPONENTIAL DISTRIBUTIONS; FIELD-EFFECT MOBILITIES; GATE VOLTAGES; GEOMETRICAL PARAMETERS; LOCALIZED STATE; MODEL APPROACH; NON-IDEALITIES; OVERALL-MODEL; SCALING DOWN; SHORT-CHANNEL DEVICES; TRANSPORT PHYSICS; ZNO;

ACTIVATION ENERGY; CIRCUIT SIMULATION; COMPUTER SIMULATION; CONTACT RESISTANCE; MATHEMATICAL MODELS; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

TRANSISTORS;

EID: 80052090708     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2159929     Document Type: Article

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