Universal compact model for long- and short-channel Thin-Film Transistors

Solid-State Electronics

Volumn 52, Issue 3, 2008, Pages 400-405

  Iñiguez, Benjamin ^a   Picos, Rodrigo ^b   Veksler, Dmitry ^c   Koudymov, A ^c   Shur, Michael S ^c   Ytterdal, Trond ^d   Jackson, Warren ^e  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b UNIVERSITAT DE LES ILLES BALEARS   (Spain)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^e HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; ITERATIVE METHODS; NONLINEAR SYSTEMS; PARAMETER EXTRACTION; POLYSILICON;

NONLINEAR CONTACT EFFECTS; SHORT-CHANNEL DEVICES;

THIN FILM TRANSISTORS;

EID: 39049128458     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.027     Document Type: Article

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