Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 813-816

  Navamathavan, R ^a   Choi, Chi Kyu ^a   Yang, Eun Jeong ^b   Lim, Jae Hong ^b   Hwang, Dae Kue ^b   Park, Seong Ju ^b  

^a Jeju National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Electrical properties; rf magnetron sputtering; Semiconductor; Thin film transistor; ZnO

Indexed keywords

ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; SEMICONDUCTOR MATERIALS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CHANNEL LAYERS; CHANNEL LENGTH; DIELECTRIC LAYER;

ZINC OXIDE;

EID: 41449092578     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.11.010     Document Type: Article

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