Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions

Solid-State Electronics

Volumn 41, Issue 9, 1997, Pages 1363-1369

  Valdinoci, M ^a   Colalongo, L ^a   Baccarani, G ^a   Pecora, A ^b   Policicchio, I ^b   Fortunato, G ^b   Plais, F ^c   Legagneux, P ^c   Reita, C ^c   Pribat, D ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b CNR   (Italy)

^c THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; GRAIN BOUNDARIES; IONIZATION; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

COMPLEX ENERGY DISTRIBUTION; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0031238135     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00130-5     Document Type: Article

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