Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering

Surface and Coatings Technology

Volumn 205, Issue 23-24, 2011, Pages 5269-5277

  Wang, Fang Hsing ^a   Chang, Hung Peng ^a   Tseng, Chih Chung ^a   Huang, Chia Cheng ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Al doped ZnO; Sputtering; Thin film; Transparent conductive oxide

Indexed keywords

AL-DOPED ZNO; AZO FILMS; AZO THIN FILMS; DEPOSITION TEMPERATURES; GLASS SUBSTRATES; GRAIN SIZE; LARGE SIZES; PLASMA TREATMENT; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; TRANSPARENT CONDUCTIVE OXIDES; TRANSPARENT ELECTRODE; ZNO:AL THIN FILMS;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; ZINC OXIDE;

FILM PREPARATION;

EID: 79960699260     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.05.033     Document Type: Article

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