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Thin Solid Films

Volumn 518, Issue 24, 2010, Pages 7445-7449

Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment

(5) Chang, H P a Wang, F H a Wu, J Y a Kung, C Y a Liu, H W a

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

Author keywords

Aluminum doped zinc oxide (AZO); Hydrogen plasma; Magnetron sputtering; Resistivity

Indexed keywords

AIR AMBIENT; ALUMINUM-DOPED ZINC OXIDE; ALUMINUM-DOPED ZNO; AZO FILMS; DEEP-LEVEL DEFECTS; ELECTRICAL PROPERTY; ELECTRICAL STABILITY; ENHANCED CONDUCTIVITY; FILM CRYSTALLINITY; FILM RESISTIVITY; HYDROGEN PLASMA; HYDROGEN PLASMA TREATMENTS; HYDROGEN PLASMAS; OXYGEN SPECIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS; PLASMA TREATMENT; PREFERRED ORIENTATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; RESISTIVITY; RF-POWER; TRANSPARENT ELECTRODE;

ALUMINUM; DESORPTION; ELECTRIC PROPERTIES; HYDROGEN; MAGNETRON SPUTTERING; OXIDE FILMS; OXYGEN; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; VOLTAGE DIVIDERS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

PLASMA STABILITY;

EID: 77956873362 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.05.020 Document Type: Conference Paper

Times cited : (40)

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