Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5628-5630

  Chen, Liang Yih ^a   Chen, Wen Hwa ^a   Wang, Jia Jun ^a   Hong, Franklin Chau Nan ^a   Su, Yan Kuin ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; HYDROGEN; LIGHT ABSORPTION; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; SUBSTRATES; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

FIRST-PRINCIPLES CALCULATIONS; HYDROGEN-DOPED ZINC OXIDE FILMS; INTERPLANAR SPACING; N-TYPE SEMICONDUCTORS;

METALLIC FILMS;

EID: 12944271884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1835991     Document Type: Article

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