Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H 2 ambient at low temperature

Applied Surface Science

Volumn 253, Issue 6, 2007, Pages 2999-3003

  Liu, W F ^a   Du, G T ^a,b   Sun, Y F ^b   Bian, J M ^a   Cheng, Y ^a   Yang, T P ^b   Chang, Y C ^b   Xu, Y B ^a  

^a State Key Laboratory for Materials Modification by Laser Ion and Electron Beams   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

Al doped ZnO (AZO); H 2; Low temperature deposition; Transparent conductive oxides; XPS

Indexed keywords

ALUMINUM; DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

HYDROGEN FLUX; LOW TEMPERATURE DEPOSITION;

THIN FILMS;

EID: 33845810556     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.06.049     Document Type: Article

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