Effect of rf-power density on the resistivity of Ga-doped ZnO film deposited by rf-magnetron sputter deposition technique

Current Applied Physics

Volumn 10, Issue SUPPL. 3, 2010, Pages

  Kim, Jun Kwan ^a,b   Yun, Sun Jin ^a,b   Lee, Jae Min ^a,b   Wook Lim, Jung ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

Author keywords

Ga doped ZnO; RF Magnetron sputter; RF Power density; Solar cell; Transparent conducting oxide

Indexed keywords

GA-DOPED ZNO; MAGNETRON SPUTTER; RF-POWER; RF-POWER DENSITY; TRANSPARENT CONDUCTING OXIDE;

CONDUCTIVE FILMS; DEPOSITION; FILM THICKNESS; GALLIUM; MAGNETIC FILMS; MAGNETRONS; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77955512195     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.01.008     Document Type: Conference Paper

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