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Volumn 110, Issue 1, 2011, Pages

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

(9) Nainani, Aneesh a Yuan, Ze a Krishnamohan, Tejas a Bennett, Brian R b Boos, J Brad b Reason, Matthew b Ancona, Mario G b Nishi, Yoshio a Saraswat, Krishna C a

a Stanford University (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL COMPRESSION; BURIED CHANNELS; EFFECT OF STRAIN; EFFECTS OF STRAINS; I-V MEASUREMENTS; LOW TEMPERATURES; MBE GROWTH; MOS-FET; P-MOSFETS; SELF-ALIGNED; SUBTHRESHOLD SWING; TRANSISTOR CHARACTERISTICS; TRANSISTOR PERFORMANCE; UNI-AXIAL STRAINS;

ANTIMONY; ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HETEROJUNCTIONS; HOLE MOBILITY; ION IMPLANTATION; LOGIC DESIGN; MOSFET DEVICES;

TRANSISTORS;

EID: 79960515846 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3600220 Document Type: Article

Times cited : (43)

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