Record-high electron mobility in Ge n-MOSFETs exceeding Si universality

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Lee, C H ^a   Nishimura, T ^a   Saido, N ^a   Nagashio, K ^a   Kita, K ^a   Toriumi, A ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL INTERFACE; HIGH ELECTRON MOBILITY; KINETIC CONTROL; MOSFETS; NMOSFETS; SCATTERING SOURCE;

ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRONS; GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 77952333907     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424323     Document Type: Conference Paper

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