SCOPUS 정보 검색 플랫폼

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack

(14) Huang, J a Goel, N a Zhao, H b Kang, C Y a Min, K S a Bersuker, G a Oktyabrsky, S c Gaspe, C K d Santos, M B d Majhi, P a Kirsch, P D a Tseng, H H e Lee, J C b Jammy, R a

a SEMATECH (United States)

b UNIVERSITY OF TEXAS AT AUSTIN (United States)

c STATE UNIVERSITY OF NEW YORK (United States)

d UNIVERSITY OF OKLAHOMA (United States)

e TEXAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; BI-LAYER; BORDER TRAPS; CYCLIC STRESS; FIXED CHARGES; GATE STACKS; IMPROVED RELIABILITY; INTERFACE CHARGE; INTERFACE DEGRADATION; INTERFACE TRAP DENSITY; INTERFACE TRAPS; MOSFET PERFORMANCE; MOSFETS; NET EFFECT; RELIABILITY IMPROVEMENT; SIMULTANEOUS REDUCTION;

ALUMINUM; ELECTRON DEVICES; GALLIUM; MOSFET DEVICES; RELIABILITY;

ZIRCONIUM ALLOYS;

EID: 77952407414 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2009.5424357 Document Type: Conference Paper

Times cited : (27)

References (7)

1
- 2942700372
- A capacitancebased methodology for work function extraction of metals on high-κ
- R. Jha, J. Gurganos, Y.H. Kim, R. Choi, J. Lee, V. Misra," A capacitancebased methodology for work function extraction of metals on high-κ" IEEE Electron Device Lett., 25, 420 (2004).
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 420
- Jha, R.¹ Gurganos, J.² Kim, Y.H.³ Choi, R.⁴ Lee, J.⁵ Misra, V.⁶

2
- 0035504954
- Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high- κ insulator: The role of remote phonon scattering
- M.V. Fischetti, D. A. Neumayer and E. A. Cartier, " Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high- κ insulator: The role of remote phonon scattering," J. Appl. Phys. 90, 4587 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 4587
- Fischetti, M.V.¹ Neumayer, D.A.² Cartier, E.A.³

3
- 2942702306
- High-κ/metal-gate stack and its MOSFET characteristics
- R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, M. Metz, "High-κ/metal-gate stack and its MOSFET characteristics," IEEE Electron Device Lett., 25, 408 (2004).
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 408
- Chau, R.¹ Datta, S.² Doczy, M.³ Doyle, B.⁴ Kavalieros, J.⁵ Metz, M.⁶

4
- 68249142012
- Addressing the gate stack challenge for high mobility inxga1-xas channels for NFETs
- N. Goel, D. Heh, S. Koveshnikov, I. Ok, S. Oktyabrsky, V. Tokranov, R. Kambhampati, M. Yakimov, Y. Sun, P. Pianetta, C.K. Gaspe, M.B. Santos, J. Lee, S. Datta, P. Majhi, and W. Tsai "Addressing The Gate Stack Challenge For High Mobility InxGa1-xAs Channels For NFETs ," IEDM Tech. Dig., p.363, 2008.
- (2008) IEDM Tech. Dig. , pp. 363
- Goel, N.¹ Heh, D.² Koveshnikov, S.³ Ok, I.⁴ Oktyabrsky, S.⁵ Tokranov, V.⁶ Kambhampati, R.⁷ Yakimov, M.⁸ Sun, Y.⁹ Pianetta, P.¹⁰ Gaspe, C.K.¹¹ Santos, M.B.¹² Lee, J.¹³ Datta, S.¹⁴ Majhi, P.¹⁵ Tsai, W.¹⁶

5
- 77952337919
- E. Chagrov, et al., AVS meeting 2008.
- (2008) AVS Meeting
- Chagrov, E.¹

6
- 80055011907
- 0.47As MOSFETs (EOT∼10Å) Using various interfacial dielectric layers
- H. Zhao, Y. Chen, J. Yum, Y. Wang and J.C. Lee, "HfO2-based In0.53Ga0.47As MOSFETs (EOT∼10Å) Using Various Interfacial Dielectric Layers," Dev. Research Conf. 2009.
- (2009) Dev. Research Conf.
- Zhao, H.¹ Chen, Y.² Yum, J.³ Wang, Y.⁴ Lee, J.C.⁵

7
- 0039678348
- Wiley, New York
- E. H. Nichollian, and J. R. Brews, MOS Physics and Technology, Wiley, New York., pp178-234 (1982).
- (1982) MOS Physics Technology , pp. 178-234
- Nichollian, E.H.¹ Brews, J.R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.