Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

Journal of Crystal Growth

Volumn 312, Issue 1, 2009, Pages 37-40

  Bennett, Brian R ^a   Ancona, Mario G ^a   Champlain, James G ^a   Papanicolaou, Nicolas A ^a   Boos, J Brad ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials; B3. Field effect transistors; B3. High electron mobility transistors

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; A3. QUANTUM WELLS; B2. SEMICONDUCTING III-V MATERIALS; B3. FIELD-EFFECT TRANSISTORS; B3. HIGH ELECTRON MOBILITY TRANSISTORS;

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70449480812     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.047     Document Type: Article

References (31)

1. Kiehl R.A., Wright S.L., Yates J., and Olson M.A. IEEE Electron Device Lett. 10 (1989) 42
2. Brown R.B., Bernhardt B., LaMacchia M., Abrokwah J., Parakh P.N., Basso T.D., Gold S.M., Stetson S., Gauthier C.R., Foster D., Crawforth B., McQuire T., Sakallah K., Lomax R.J., and Mudge T.N. IEEE Trans. VLSI Syst. 6 (1998) 47
3. Leuther A., Thiede A., Kohler K., Jakobus T., and Weimann G. Compd. Semicond. 1999 (2000) 313
4. Tsai J.H., and Li C.M. Solid State Electron. 52 (2008) 146
5. Chau R., Datta S., Doczy M., Doyle B., Jin J., Kavalieros J., Majumdar A., Metz M., and Radosavljevic M. IEEE Trans. Nanotechnol. 4 (2005) 153
6. Bennett B.R., Magno R., Boos J.B., Kruppa W., and Ancona M.G. Solid State Electron. 49 (2005) 1875
7. Longenbach K.F., Beresford R., and Wang W.I. IEEE Trans. Electron Devices 37 (1990) 2265
8. Yoh K., Taniguchi H., Kiyomi K., and Inoue M. Jpn. J. Appl. Phys. I 30 (1991) 3833
9. Yoh K., Kiyomi K., Yano M., and Inoue M. J. Cryst. Growth 127 (1993) 29
10. Yang M.J., Wang F.C., Yang C.H., Bennett B.R., and Do T.Q. Appl. Phys. Lett. 69 (1996) 85
11. Passlack M., Droopad R., Fejes P., and Wang L.Q. IEEE Electron Device Lett. 30 (2009) 2
12. Bennett B.R., Ancona M.G., Boos J.B., Canedy C.B., and Khan S.A. J. Cryst. Growth 311 (2008) 47
13. Bennett B.R., Ancona M.G., Brad Boos J., and Shanabrook B.V. Appl. Phys. Lett. 91 (2007) 042104
14. Boos J.B., Bennett B.R., Papanicolaou N.A., Ancona M.G., Champlain J.G., Bass R., and Shanabrook B.V. Electron. Lett. 43 (2007) 834
15. Boos J.B., Bennett B.R., Papanicolaou N.A., Ancona M.G., Champlain J.G., Chou Y.C., Lange M.D., Yang J.M., Bass R., Park D., and Shanabrook B.V. IEICE Trans. Electron E91c (2008) 1050
16. Radasavljevic M., Ashley T., Andreev A., Coomber S.D., Dewey G., Emeny M.T., Fearn M., Hayes D.G., Hilton K.P., Hudait M.K., Jefferies R., Martin T., Pillarisetty R., Rachmady W., Rakshit T., Smith S.J., Uren M.J., Wallis D.J., Wilding P.J., and Chau R. IEDM Tech. Dig. (2008) 727
17. Birner S., Zibold T., Andlauer T., Kubis T., Sabathil M., Trellakis A., and Vogl P. IEEE Trans. Electron Devices 54 (2007) 2137
18. Li X., Du Q., Heroux J.B., and Wang W.I. Solid State Electron. 41 (1997) 1853
19. Delhaye G., Desplanque L., and Wallart X. J. Appl. Phys. 104 (2008) 066105
20. Datta S., Ashley T., Brask J., Buckle L., Doczy M., Emeny M., Hayes D., Hilton K., Jefferies R., Martin T., Phillips T.J., Wallis D., Wilding P., and Chau R. IEDM Tech. Dig. (2005) 783
21. Ancona M.G., Boos J.B., and Bennett B.R. Proc. Int. Conf. Sim. Semicond. Processes Devices (2009) 75
22. Chan Y.J., and Pavlidis D. IEEE Trans. Electron Devices 39 (1992) 466
23. Drummond T.J., Zipperian T.E., Fritz I.J., Schirber J.E., and Plut T.A. Appl. Phys. Lett. 49 (1986) 461
24. Hsu R.T., Hsu W.C., Wang J.S., Kao M.J., Wu Y.H., and Su J.S. Jpn. J. Appl. Phys. I 35 (1996) 2085
25. Kim H.J., Kim D.M., Woo D.H., Kim S.I., Kim S.H., Lee J.I., Kang K.N., and Cho K. Appl. Phys. Lett. 72 (1998) 584
26. Kusters A.M., Kohl A., Sommer V., Muller R., and Heime K. IEEE Trans. Electron Devices 40 (1993) 2164
27. Ruden P.P., Shur M., Arch D.K., Daniels R.R., Grider D.E., and Nohava T.E. IEEE Trans. Electron Devices 36 (1989) 2371
28. Tsai J.H., Zhu K.P., Chu Y.C., and Chiu S.Y. Electron. Lett. 39 (2003) 1611
29. Luo L.F., Longenbach K.F., and Wang W.I. Electron. Lett. 27 (1991) 472
30. Klem J.F., Lott J.A., Schirber J.E., Kurtz S.R., and Lin S.Y. J. Electron. Mater. 22 (1993) 315
31. Edirisooriya M., Mishima T.D., Gaspe C.K., Bottoms K., Hauenstein R.J., and Santos M.B. J. Cryst. Growth 311 (2009) 1972