Engineering of strained III-V heterostructures for high hole mobility

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Nainani, Aneesh ^a   Raghunathan, Shyam ^a   Witte, Daniel ^a   Kobayashi, Masaharu ^a   Irisawa, Toshifumi ^a   Krishnamohan, Tejas ^a,b   Saraswat, Krishna ^a   Bennett, Brian R ^c   Ancona, Mario G ^c   Boos, J Brad ^c  

^a STANFORD UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS LOGIC; EFFECTIVE MASS; ENERGY SPLIT; HEAVY HOLES; HETEROSTRUCTURES; HIGH MOBILITY; HIGH-SPEED; HOLE GAS; II-IV SEMICONDUCTORS; INTERBAND SCATTERING; LIGHT HOLES; LOGIC APPLICATIONS; LOW POWER; NUMBER OF STATE; SCATTERING MECHANISMS; VALENCE BAND OFFSETS;

ELECTRON DEVICES; HETEROJUNCTIONS; MESFET DEVICES; SCATTERING;

HOLE MOBILITY;

EID: 77952330175     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424267     Document Type: Conference Paper

References (13)

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