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Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors

(5) Xia, Ling a Boos, J Brad b Bennett, Brian R b Ancona, Mario G b Del Alamo, Jesús A a

a USA (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING EXPERIMENTS; METAL OXIDE SEMICONDUCTOR; MOBILITY ENHANCEMENT; PIEZORESISTANCE COEFFICIENTS; PROMISING MATERIALS; QUANTUM WELL; TWO-DIMENSIONAL HOLE GAS (2DHG); UNI-AXIAL STRAINS;

DRAIN CURRENT; HOLE MOBILITY; INDIUM ANTIMONIDES; MESFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

FIELD EFFECT TRANSISTORS;

EID: 79951522880 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3552963 Document Type: Article

Times cited : (27)

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