Development of high-k dielectric for antimonides and a sub 350°C III-V pMOSFET outperforming Germanium

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Nainani, Aneesh ^a   Irisawa, Toshifumi ^a   Yuan, Ze ^a   Sun, Yun ^b   Krishnamohan, Tejas ^a   Reason, Matthew ^c   Bennett, Brian R ^c   Boos, J Brad ^c   Ancona, Mario G ^c   Nishi, Yoshio ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONIDES; FUTURE TECHNOLOGIES; HIGH MOBILITY; HIGH-K DIELECTRIC; P-MOSFETS; PMOSFET; SELF-ALIGNED GATE; STRAIN ENGINEERING;

ELECTRON DEVICES; GALLIUM; GERMANIUM;

MOSFET DEVICES;

EID: 79951848139     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703309     Document Type: Conference Paper

References (13)

1. A. Nainani, Z. Yuan, T. Krishnamohan and K. Saraswat, Proceedings of SISPAD 2010, pp. 103.
2. A. Nainani, D. Kim, T. Krishnamohan and K. Saraswat, Proceedings of SISPAD 2009, pp. 47.
3. A. Nainani, S. Raghunathan, D. Witte, M. Kobayashi, T. Irisawa, T. Krishnamohan, K. Saraswat, B.R. Bennett, M.G. Ancona and J.B. Boos, International Electron Device Meeting 2009, pp. 857.
4. S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T.J. Phillips, D. Wallis, P. Wilding and R. Chau, International Electron Device Meeting 2005, pp. 763.
5. J. B. Boos, B. R. Bennett, N. A. Papanicolaou, M. G. Ancona, J. G. Champlain, R. Bass and B. V. Shanabrook, Electronics Letters, 43, pp.834 (2007).
6. M. Passlack, P. Zurcher, K. Rajagopalan, R. Droopad, J. Abrokwah, M. Tutt, Y.B. Park, E. Johnson, O. Hartin, A. Zlotnicka, P. Fejes, R.J.W Hill, D.A.J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thorns, A. Asenov, K. Kalna and I.G. Thayne, International Electron Device Meeting 2007, pp. 621
7. N.V. Nguyen, M. Xu, O.A. Kirillov, P.D. Ye, C. Wang, K. Cheung and J. S. Suehle, Applied Physics Letters, 96 (5), 052107 (2010).
8. E.H/ Nicollian, A. Goetzberger, Bell System and Technology Journal, 46, 1055 (1967).
9. J. Robertson, Journal of Applied Physics, 100, 014111 (2006).
10. T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi, and K.C. Saraswat, IEEE Transaction on Electron Devices , 53 (5), pp. 990 (2006).
11. C. H. Lee, T. Nishimura, N. Saido, K. Nagashio, K. Kita and A. Toriumi, International Electron Device Meeting 2009, pp. 457.
12. M. Kobayashi, P. T. Chen, Y. Sun, N. Goel, P. Majhi, M. Garner, W. Tsai, P. Pianetta and Y. Nishi, Applied Physics Letters, 93, 182103 (2008).
13. A. Nainani, J. Yum, J. Barnett, R. Hill, N. Goel, J. Huang, P. Majhi, R. Jammy and K. Saraswat, Applied Physics Letters, 96, 242110 (2010).