Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Lin, D ^a   Brammertz, G ^a   Sioncke, S ^a   Fleischmann, C ^a,b   Delabie, A ^a   Martens, K ^a   Bender, H ^a   Conard, T ^a   Tseng, W H ^c   Lin, J C ^c   Wang, W E ^a   Temst, K ^b   Vatomme, A ^b   Mitard, J ^a   Caymax, M ^a   Meuris, M ^a   Heyns, M ^a   Hoffmann, T ^a  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMMON GATES; ELECTRON FIELD; HIGH MOBILITY; HIGH-PERFORMANCE CMOS; MOS-FET; MOSFET PROCESS;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; GERMANIUM; LOGIC GATES; MOSFET DEVICES;

HOLE MOBILITY;

EID: 77952365206     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424359     Document Type: Conference Paper

References (8)

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4. J. Lin et al., IEDM Tech. Dig., p.401, 2008
5. K. Martens et al., IEEE TED, vol 55, no 2, p 547, 2008
6. G. Brammertz et al., APL vol. 91, p. 133510, 2007
7. H.C. Lin et al., APL vol. 94, p.153508, 2009
8. E. H. Nicolian and J. R. Brews, MOS Phys. and Tech., Wiley, 2003. p. 215-216