Hole mobility and its enhancement with strain for technologically relevant III-V semiconductors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Nainani, Aneesh ^a   Kim, Donghyun ^a   Krishnamohan, Tejas ^a   Saraswat, Krishna ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 74349109250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290251     Document Type: Conference Paper

References (14)

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