Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

Applied Physics Letters

Volumn 96, Issue 24, 2010, Pages

  Nainani, Aneesh ^a   Yum, Jung ^b   Barnett, Joel ^b   Hill, Richard ^b   Goel, Niti ^b   Huang, Jeff ^b   Majhi, Prashant ^b   Jammy, Raj ^b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

II-IV SEMICONDUCTORS; IN0.53GA0.47AS; MAXIMUM STRESS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; PIEZORESISTANCE; SILICON SUBSTRATES; UNIAXIAL STRESS; WAFER BENDING;

GALLIUM ALLOYS; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 77953729458     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3436561     Document Type: Article

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