Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

Journal of Physics D: Applied Physics

Volumn 43, Issue 48, 2010, Pages

  Gong, Chun ^a,b   Simoen, Eddy ^a   Posthuma, Niels E ^a   Van Kerschaver, Emmanuel ^a,c   Poortmans, Jef ^a,b   Mertens, Robert ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Solexel Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE CROSS SECTIONS; CONDUCTION BAND EDGE; DEFECT STATE; DIRECT PLASMA; DLTS; ELECTRON-CAPTURE CROSS SECTIONS; ENERGY DEPENDENT; ENERGY LEVEL; INTERFACE PROPERTY; INTERFACE STATES DENSITY; LOW FREQUENCY; METAL INSULATOR SEMICONDUCTOR CAPACITORS; N TYPE SILICON; PRE-TREATMENT; SI SURFACES; SURFACE PASSIVATION; TEXTURED SURFACE;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON MOBILITY; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

SILICON WAFERS;

EID: 78650155219     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/48/485301     Document Type: Article

References (24)

1. Agnihotri O P, Jain S C, Poortmans J, Szlufczik J, Beaucarne G, Nijs J and Mertens R 2000 Semicond. Sci. Technol. 15 R29
2. Schmidt J, Kerr M and Cuevas A 2001 Semicond. Sci. Technol. 16 164
3. Aberle A G, Lauinger T, Schmidt J and Hezel R 1995 Appl. Phys. Lett. 66 2828
4. De Wolf S, Agostinelli G, Beaucarne G and Vitanov P 2005 J. Appl. Phys. 97 063303
5. Aberle A G, Glunz S and Warta W 1992 J. Appl. Phys. 71 4422
6. Hezel R, Blumenstock K and Schörner R 1984 J. Electrochem. Soc. 131 1679
7. Schmidt J, Schuurmans F M, Sinke W C, Glunz S W and Aberle A G 1997 Appl. Phys. Lett. 71 252
8. Garcia S, Martil I, Gonzalez Diaz G, Castan E, Dueñas S and Fernandez M 1998 J. Appl. Phys. 83 332
9. Schmidt J and Aberle A 1999 J. Appl. Phys. 85 3626
10. Gong C, Simoen E, Yang R, Posthuma N, Van Kerschaver E, Poortmans J and Mertens R 2009 Proc. MRS Fall Meeting, Symposium Q 1210 Q05-04
11. Pearce N O, Hamilton B, Peaker A R and Craven R A 1987 J. Appl. Phys. 62 576
12. Volkos S N, Efthymiou E S, Bernardini S, Hawkins I D, Peaker A R and Petkos G 2006 J. Appl. Phys. 100 124103
13. Jousse D, Kanicki J and Stathis J H 1989 Appl. Phys. Lett. 54 1043
14. Ozder S, Atilgan I and Katircioglu B 1995 Semicond. Sci. Technol. 10 1510
15. Jeon I S, Park J, Eom D, Hwang C S, Kim H J, Park C J, Cho H Y, Lee J-H, Lee N-I and Kang H-K 2003 Appl. Phys. Lett. 82 1066-8
16. Gong C, Simoen E, Posthuma N, Van Kerschaver E, Poortmans J and Mertens R 2010 Appl. Phys. Lett. 96 103507
17. Johnson N M 1979 Appl. Phys. Lett. 34 802
18. Murray F, Carin R and Bogdanski P 1986 J. Appl. Phys. 60 3592
19. Arai H, Tanaka K and Kohda S 1988 J. Vac. Sci. Technol. B 6 831
20. Takakura T, Imai R, Okamoto Y and Taniguchi H 2010 Japan. J. Appl. Phys. 49 046502
21. McIntosh K R and Johnson L P 2009 J. Appl. Phys. 105 124520
22. Xiong K, Lu S, Jiang D, Dong J and Yang H 2010 Appl. Phys. Lett. 96 193107
23. Recart F and Cuevas A 2006 IEEE Trans. Electron Devices 53 442
24. Goodman A M 1963 J. Appl. Phys. 34 329