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Volumn 96, Issue 10, 2010, Pages

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

(6) Gong, Chun a,b Simoen, Eddy a Posthuma, Niels a Van Kerschaver, Emmanuel a,c Poortmans, Jef a,b Mertens, Robert a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

c Solexel Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; DEEP LEVEL; DEFECT STATE; DIRECT PLASMA; DLTS; ENERGY DEPENDENT; HOLE CAPTURE CROSS SECTIONS; INTERFACE PROPERTY; INTERFACE STATE; INTERFACE STATES DENSITY; LOW FREQUENCY; MONOCRYSTALLINE SILICON; P-TYPE; P-TYPE SI; PLASMA PRE-TREATMENT; PRE-TREATMENT; SILICON INTERFACE; SOLAR CELL FABRICATION;

PASSIVATION; PLASMAS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON NITRIDE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 77949760997 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3358140 Document Type: Article

Times cited : (26)

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