High-efficiency c-si solar cells passivated with ALD and PECVD aluminum oxide

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 695-697

  Saint Cast, Pierre ^a   Benick, Jan ^a   Kania, Daniel ^a   Weiss, Lucas ^a   Hofmann, Marc ^a   Rentsch, Jochen ^a   Preu, Ralf ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Aluminum oxide; atomic layer deposition (ALD); high efficiency solar cells; passivation; plasma enhanced chemical vapor deposited (PECVD)

Indexed keywords

ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; C-SI SOLAR CELL; CHEMICAL VAPOR DEPOSITED; HIGH EFFICIENCY; HIGH POTENTIAL; HIGH VOLTAGE; HIGH-EFFICIENCY SOLAR CELLS; LONG WAVELENGTH; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE REFLECTIONS; ULTRA-THIN;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL VAPOR DEPOSITION; PASSIVATION; PLASMA DEPOSITION; SILICON COMPOUNDS; SILICON OXIDES; SILICON SOLAR CELLS; SOLAR CELLS; SWITCHING CIRCUITS; VAPORS;

ALUMINUM COATINGS;

EID: 77954121960     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2049190     Document Type: Article

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