The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

  Brehm, M ^a   Grydlik, M ^a   Groiss, H ^a   Hackl, F ^a   Schffler, F ^a   Fromherz, T ^a   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE COMPOSITION; CAP LAYERS; EXTERNAL SOURCES; GROWTH SYSTEMS; ISLAND NUCLEATION; MATERIAL TRANSFERS; PL SPECTRA; SATURATION REGIME; SELF-ORGANIZED; SIGE ISLANDS; SIGE/SI; ULTRAHIGH RESOLUTION; UPPER LIMITS; WETTING LAYER;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DISSOLUTION; DOMES; GERMANIUM; MONOLAYERS; NUCLEATION; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

SILICON ALLOYS;

EID: 79960159688     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3594693     Document Type: Article

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