Inverted Ge islands in {111} faceted Si pits - A novel approach towards SiGe islands with higher aspect ratio

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Grydlik, M ^a   Brehm, M ^a   Hackl, F ^a   Groiss, H ^a   Fromherz, T ^a   Schaffler F ^a   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON STATE; ENERGY LEVEL; ENVELOP FUNCTION; GE ISLAND; GROWTH DIRECTIONS; HARD MASKS; PIT PATTERNS; PYRAMIDAL PITS; SI (001) SUBSTRATE; SIGE ISLANDS; SOLID SOURCE MOLECULAR BEAM EPITAXY; THREE-DIMENSIONAL (3D); TOP SURFACE; WET-CHEMICAL ETCH; WET-ETCH;

ASPECT RATIO; CRYSTAL GROWTH; DOMES; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; GROWTH TEMPERATURE; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; NUCLEATION; PRESSURE DROP; REACTIVE ION ETCHING; SILICON; SILICON ALLOYS; SILICON NITRIDE; THREE DIMENSIONAL; WET ETCHING;

GERMANIUM;

EID: 77953596747     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/6/063002     Document Type: Article

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