Recent progress of Ferroelectric-Gate Field-Effect transistors and applications to nonvolatile logic and FeNAND flash memory

Materials

Volumn 3, Issue 11, 2010, Pages 4950-4964

  Sakai, Shigeki ^a   Takahashi, Mitsue ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

FeFET; Nonvolatile logic; Nonvolatile memory; Semiconductor memory

Indexed keywords

ELEVATED TEMPERATURE; FEFET; FUNDAMENTAL PROPERTIES; INTEGRATED CIRCUIT APPLICATIONS; NON-VOLATILE LOGIC; NON-VOLATILE MEMORY; RETENTION CHARACTERISTICS; SEMICONDUCTOR MEMORY;

ALUMINUM; DRAIN CURRENT; EXTRAPOLATION; FERROELECTRICITY; FLASH MEMORY; HAFNIUM; HAFNIUM OXIDES; SEMICONDUCTOR STORAGE;

FIELD EFFECT TRANSISTORS;

EID: 79959981576     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma3114950     Document Type: Review

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