Highly scalable Fe(ferroelectric)-NAND cell with MFIS(metal-ferroelectric- insulator-semiconductor) structure for sub-10nm tera-bit capacity NAND flash memories

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 103-105

  Sakai, Shigeki ^a   Takahashi, Mitsue ^a   Takeuchi, Ken ^b   Li, Qiu Hong ^a   Horiuchi, Takeshi ^a   Wang, Shouyu ^a   Yun, Kwi Young ^a   Takamiya, Makoto ^c   Sakurai, Takayasu ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

FeFET; Ferroelectric gate; NAND Flash; Scalable

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; FERROELECTRICITY; MESFET DEVICES; METALS; NAND CIRCUITS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGY;

DATA-RETENTION; FEFET; FERROELECTRIC GATE; FERROELECTRIC GATES; INTERNATIONAL CONFERENCES; LOW VOLTAGES; MEMORY TECHNOLOGY; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; NAND FLASH; NAND FLASH MEMORIES; NON-VOLATILE; READ DISTURB; SCALABLE; SEMICONDUCTOR MEMORIES; VOLTAGE OPERATIONS;

FLASH MEMORY;

EID: 50249086962     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.36     Document Type: Conference Paper

References (6)

1. S. Sakai, US Patent 7,226,795.
2. S. Sakai, and R. Ilangovan, "Metal-ferroelectric-insulator- semiconductor memory FET with long retention and high endurance," IEEE Electron Device Lett., vol. 25, No. 6, pp.369-371, June 2004.
3. 1-x buffer-insulating layer for 1T FeRAM" Tech. Dig. Int. Electron Devices Meet. 2004, pp.915-918, December 2004.
4. M. Takahashi, and S. Sakai, "Self-Aligned-Gate Metal/Ferroelectric/ Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention", Jpn. J. Appl. Phys., vol. 44, No. 25, pp. L800-L802, June 2005.
5. 9/Hf-Al-O/Si field-effect transistors at elevated temperatures", Appl.Phys.Lett., Vol.89, 222910, November 2006.
6. K. Takeuchi, "NAND Memories for SSD", ISSCC Tutorial-T7, February 2008.