One transistor ferroelectric memory devices with improved retention characteristics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6890-6894

  Li, Tingkai ^a   Hsu, Sheng Teng ^a   Ulrich, Bruce ^a   Stecker, Lisa ^a   Evans, Dave ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

Ferroeiectrics; Memory; MOCVD; Pb5Ge3O 11; Transistor device

Indexed keywords

ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICES; TRANSISTORS;

FERROEIECTRICS; MEMORY; TRANSISTOR DEVICE;

FERROELECTRIC DEVICES;

EID: 0043065680     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6890     Document Type: Article

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