Fabrication and characterization of sub-0.6-μm ferroelectric-gate field-effect transistors

Semiconductor Science and Technology

Volumn 25, Issue 11, 2010, Pages

  Hai, Le Van ^a   Takahashi, Mitsue ^a   Sakai, Shigeki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE FIELD; GATE LENGTH; GATE VOLTAGES; HARD MASKS; MEMORY WINDOW; NAND FLASH MEMORY; ON/OFF RATIO; PROGRAM/ERASE; RETENTION MEASUREMENT; SUBMICRON;

DRAIN CURRENT; FABRICATION; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FLASH MEMORY; HAFNIUM; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; TANTALUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78649960985     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/11/115013     Document Type: Article

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