Electrical properties of Metal-Ferroelectric-Insulator-Semiconductor-FET using SrBi2Ta2O9 film prepared at low temperature by pulsed laser deposition

Integrated Ferroelectrics

Volumn 34, Issue 1-4, 2001, Pages 81-91

  Sugiyama, H ^a   Kodama, K ^a   Nakaiso, T ^a   Noda, M ^a   Okuyama, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ferroelectric thin film; Memory window; Metal Ferroelectric Insulator Semiconductor (MFIS) FET; Pulsed Laser Deposition (PLD); SiON; SrBi2Ta2O9 (SBT)

Indexed keywords

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); PULSED LASER DEPOSITION; STRONTIUM COMPOUNDS; THERMAL EFFECTS;

MEMORY WINDOW; METAL FERROELECTRIC INSULATOR SEMICONDUCTOR; STRONTIUM BISMUTH TITANATE;

FERROELECTRIC THIN FILMS;

EID: 0035031665     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108012877     Document Type: Conference Paper

References (13)