Application of the ferroelectric materials to ULSI memories

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 656-663

  Tarui, Yasuo ^a   Hirai, Tadahiko ^a,b   Teramoto, Kazuhiro ^a   Koike, Hiroshi ^a   Nagashima, Kazuhito ^a  

^a WASEDA UNIVERSITY   (Japan)

^b ASAHI CHEMICAL INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CESIUM COMPOUNDS; DATA STORAGE EQUIPMENT; INTERFACES (MATERIALS); OPTIMIZATION; PERMITTIVITY; TRANSISTORS; ULSI CIRCUITS;

CESIUM DIOXIDE; NONVOLATILE MEMORY ACTION;

FERROELECTRIC MATERIALS;

EID: 0031547441     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00963-4     Document Type: Article

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