Band offsets of a ruthenium gate on ultrathin high- κ oxide films on silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 7, 2009, Pages

  Rangan, Sylvie ^a   Bersch, Eric ^a   Bartynski, Robert Allen ^a   Garfunkel, Eric ^a   Vescovo, Elio ^b  

^a RUTGERS UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 61549116833     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.075106     Document Type: Article

References (25)

1. G. D. Wilk, R. M. Wallace, and J. M. Antony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
2. E. P. Gusev, V. Narayanan, and M. M. Frank, IBM J. Res. Dev. 50, 387 (2006).
3. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000). 10.1116/1.591472
4. I. De, D. Johri, A. Srivastava, and C. Osburn, Solid-State Electron. 44, 1077 (2000). 10.1016/S0038-1101(99)00323-8
5. K. Mistry, Tech. Dig.-Int. Electron Devices Meet, 247 (2007).
6. A. A. Demkov, L. R. C. Fonseca, E. Verret, J. Tomfohr, and O. F. Sankey, Phys. Rev. B 71, 195306 (2005). 10.1103/PhysRevB.71.195306
7. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984 a). 10.1103/PhysRevLett.52.465
8. J. Tersoff, Phys. Rev. B 30, 4874 (1984 b). 10.1103/PhysRevB.30.4874
9. W. Schottky, Phys. Z. 41, 570 (1940).
10. N. F. Mott, Proc. Cambridge Philos. Soc. 34, 568 (1938). 10.1017/S0305004100020570
11. V. Heine, Phys. Rev. 138, A1689 (1965). 10.1103/PhysRev.138.A1689
12. J. Bardeen, Phys. Rev. 71, 717 (1947). 10.1103/PhysRev.71.717
13. W. Mönch, Phys. Rev. Lett. 58, 1260 (1987). 10.1103/PhysRevLett.58. 1260
14. E. Bersch, S. Rangan, R. A. Bartynski, E. Garfunkel, and E. Vescovo, Phys. Rev. B 78, 085114 (2008). 10.1103/PhysRevB.78.085114
15. D. Arena, F. Curti, and R. Bartynski, Surf. Sci. 369, L117 (1996). 10.1016/S0039-6028(96)01127-2
16. E. Vescovo, H.-J. Kim, Q.-Y. Dong, G. Nintzel, D. Carlson, S. Hulbert, and N. V. Smith, Synchrotron Radiat. News 12, 10 (1999). 10.1080/ 08940889908260995
17. N. Mårtensson and R. Nyholm, Phys. Rev. B 24, 7121 (1981). 10.1103/PhysRevB.24.7121
18. M. Ulrich, J. G. Hong, J. E. Rowe, G. Lucovsky, A.-Y. Chan, and T. E. Madey, J. Vac. Sci. Technol. B 21, 1777 (2003). 10.1116/1.1589518
19. M. Tapajna, P. Písečny, R. Lupták, K. Huseková, K. Fröhlich, L. Harmatha, J. Hooker, F. Roozeboom, and J. Jergel, Mater. Sci. Semicond. Process. 7, 271 (2004). 10.1016/j.mssp.2004.09.011
20. M. Tapajna, K. Huseková, J. P. Espinos, L. Harmatha, and K. Fröhlich, Mater. Sci. Semicond. Process. 9, 969 (2006). 10.1016/j.mssp.2006.10.012
21. Y.-S. Suh, H. Lazar, B. Chen, J.-H. Lee, and V. Misra, J. Electrochem. Soc. 152, F138 (2005). 10.1149/1.1992467
22. T. Nabatame, K. Segawa, M. Kadoshima, H. Takaba, K. Iwamoto, S. Kimura, Y. Nunoshige, H. Satake, T. Ohishi, and A. Toriumi, Mater. Sci. Semicond. Process. 9, 975 (2006). 10.1016/j.mssp.2006.10.013
23. O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, Phys. Rev. B 75, 035306 (2007). 10.1103/PhysRevB.75.035306
24. C. Fulton, G. Lucovsky, and R. Nemanich, Appl. Phys. Lett. 84, 580 (2004). 10.1063/1.1639944
25. S. Rangan, E. Bersch, R. A. Bartynski, E. Garfunkel, and E. Vescovo, Appl. Phys. Lett. 92, 172906 (2008). 10.1063/1.2917480