Optical polarization properties of m-plane AlxGa1-xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs

Optics Express

Volumn 19, Issue 104, 2011, Pages A1008-A1021

  Hazu, Kouji ^a   Chichibu, Shigefusa F ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC FIELDS; EPILAYERS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HAMILTONIANS; LIGHT EMITTING DIODES; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; SUBSTRATES;

ALN; ANISOTROPIC STRESS; ELECTRIC FIELD COMPONENTS; ENERGY TRANSITIONS; EXCITON TRANSITIONS; FREESTANDING GAN SUBSTRATES; IN-PLANE; M-PLANE; MOLE FRACTION; NEAR BAND EDGE; NON-POLAR; OSCILLATOR STRENGTHS; POLARIZATION CHARACTERISTICS; POLARIZATION DIRECTION; SURFACE EMISSIONS; SURFACE NORMALS; ULTRAVIOLET LED;

POLARIZATION;

EID: 79959881759     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.0A1008     Document Type: Article

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