Wavefunction engineering of layered wurtzite semiconductors grown along arbitrary crystallographic directions

Superlattices and Microstructures

Volumn 39, Issue 6, 2006, Pages 455-477

  Ram Mohan, L R ^a   Girgis, A M ^b   Albrecht, J D ^c   Litton, C W ^c  

^a WORCESTER POLYTECHNIC INSTITUTE   (United States)

^b Quantum Semiconductor Algorithms Inc   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Arbitrary growth direction; Layered semiconductor nanostructures; Wurtzite heterostructures

Indexed keywords

BAND STRUCTURE; BOUNDARY CONDITIONS; EIGENVALUES AND EIGENFUNCTIONS; INTERFACES (MATERIALS); SAPPHIRE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

MULTI-QUANTUM WELL SYSTEMS; STRAIN EFFECTS; VALENCE BAND; WURTZITE;

HETEROJUNCTIONS;

EID: 33747808320     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.11.001     Document Type: Article

References (57)

1. Ghosh S., Brandt O., Grahn H.T., and Ploog K.H. Phys. Status Solidi (b) 234 (2002) 882
2. Ng H.M. Appl. Phys. Lett. 80 (2002) 4369
3. Bykhovski A., Gelmont B., and Shur M. Appl. Phys. Lett. 63 (1993) 2243
4. Löwdin P.O. J. Chem. Phys. 19 (1951) 1396
5. Foreman B.A. Phys. Rev. B 48 (1993) 4964
6. van Dalen R., and Stavrinou P.N. Semicond. Sci. Technol. 13 (1998) 1
7. van Dalen R., and Stavrinou P.N. Phys. Rev. B 55 (1997) 15456
8. Mireles F., and Ulloa S.E. Phys. Rev. B 60 (1999) 13659
9. Mireles F., and Ulloa S.E. Phys. Rev. B 62 (2000) 2562
10. Gell-Mann M., and Levy M. Il Nuov. Cim. 16 (1960) 53
11. Ram-Mohan L.R., Vurgaftman I., and Meyer J.R. Microelectron. J. 30 (1999) 1031
12. Ram-Mohan L.R. Finite Element and Boundary Element Applications to Quantum Mechanics (2002), Oxford University Press, Oxford
13. Zienkiewicz O.C. The Finite Element Method (1989), McGraw-Hill, New York
14. Zienkiewicz O.C., and Taylor R.L. The Finite Element Method (1994), McGraw-Hill, New York
15. Galerkin B.G. Vestn. Inz. Tech. 19 (1915) 897
16. Ram-Mohan L.R., Yoo K.H., and Moussa J. J. Appl. Phys. 95 (2004) 3081
17. Luttinger J.M., and Kohn W. Phys. Rev. 97 (1955) 869
18. Bastard G. Wave Mechanics Applied to Semiconductor Heterostructures (1988), Les Editions de Physique, Les Ulis, France
19. Smith D.L., and Mailhiot C. Rev. Modern Phys. 62 (1990) 173
20. Burt M.G. Semicond. Sci. Technol. 2 (1987) 460
21. Semicond. Sci. Technol. 2 (1987) 701 (erratum)
22. J. Phys. Condens. Matter 4 (1992) 6651
23. Schiff L.I. Quantum Mechanics. 3rd ed. (1968), McGraw-Hill, Inc., New York p. 498
24. Kane E.O. J. Phys. Chem. Solids 6 (1958) 236
25. Kane E.O. In: Willardson R.K., and Beer A.C. (Eds). Semiconductors and Semimetals vol. 1 (1966), Academic, NY
26. Kane E.O. In: Paul W. (Ed). Handbook on Semiconductors vol. 1 (1982), North-Holland, Amsterdam 193
27. Chuang S.L., and Chang C.S. Appl. Phys. Lett. 68 (1996) 1657
28. Chuang S.L., and Chang C.S. Phys. Rev. B 54 (1996) 2491
29. Bir G.L., and Pikus G.E. Symmetry and Strain Induced Effects in Semiconductors (1974), Wiley, New York
30. Yoo K.H., Ram-Mohan L.R., and Nelson D.F. Phys. Rev. B 39 (1989) 12808
31. Fritsch D., Schmidt H., and Grundmann M. Phys. Rev. B 67 (2003) 235205
32. Sirenko Yu.M., Jeon J.B., Kim K.W., Littlejohn M.A., and Stroscio M.A. Phys. Rev. B 53 (1996) 1997
33. Luttinger J.M. Phys. Rev. 102 (1956) 1030
34. Pikus G.E. Zh. Eksp. Teor. Fiz. 41 (1961) 1258
35. Sov. Phys. JETP 14 (1962) 898
36. Ren G.B., Liu Y.M., and Blood P. Appl. Phys. Lett. 74 (1999) 1117
37. Ram-Mohan L.R., Yoo K.H., and Aggarwal R.L. Phys. Rev. B 38 (1988) 6151
38. Chen B., Lazzouni M., and Ram-Mohan L.R. Phys. Rev. B 45 (1992) 1204
39. Bathe K.-J. Finite Element Procedures in Engineering Analysis (1982), Prentice-Hall, New Jersey
40. Hughes T.J.R. The Finite Element Method (1987), Prentice-Hall, Englewood Cliffs
41. Ram-Mohan L.R. Finite Element and Boundary Element Applications to Quantum Mechanics (2002), Oxford University Press, Oxford (Chapter III)
42. Press W.H., Teukolsky S.A., Vetterling W.T., and Flannery B.R. Numerical Recipes (1992), Cambridge University Press, Cambridge
43. Lanczos C. J. Res. NBS 45 (1950) 255
44. Arnoldi W.E. Quart. J. Appl. Math. 9 (1951) 17
45. Ram-Mohan L.R., Saigal S., Dossa D., and Shertzer J. Comput. Phys. 4 (1990) 50
46. For a recent compilation of band parameters, see. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Appl. Phys. 89 (2001) 5815
47. Vurgaftman I., and Meyer J.R. J. Appl. Phys. 94 (2003) 3675
48. Capasso F. J. Vac. Sci. Technol. B 1 (1983) 457
49. Capasso F. Surf. Sci. 142 (1984) 513
50. Ram-Mohan L.R., and Meyer J.R. J. Nonlin. Opt. Phys. Mater. 4 (1995) 191
51. Ram-Mohan L.R., Dossa D., Vurgaftman I., and Meyer J.R. In: Nalwa H.S. (Ed). Handbook of Nanostructured Materials and Nanotechnology vol. 2 (1999), Academic Press, New York (Chapter 15)
52. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Quant. Electron. 34 (1998) 147
53. Meyer J.R., Hoffman C.A., Bartoli F.J., and Ram-Mohan L.R. In: Khoo I.C., Simone F., and Umeton C. (Eds). Novel Optical Materials and Applications (1996), Wiley, New York 205-237
54. Dugdale D.J., Brand S., and Abram R.A. Phys. Rev. B 61 (2000) 12933
55. Lew Yan Voon L.C., Willatzen M., Cardona M., and Christensen N.E. Phys. Rev. B 53 (1996) 10703
56. Wang J., Jeon J.B., Sirenko Y.M., and Kim K.W. IEEE Photon. Technol. Lett. 9 (1997) 728
57. Park S.-H., and Chuang S.L. Appl. Phys. Lett. 76 (2000) 1981