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Applied Physics Express

Volumn 3, Issue 3, 2010, Pages

222nm deep-ultraviolet AlGaN quantum well light-emitting diode with vertical emission properties

(3) Hirayama, Hideki a,c Noguchi, Norimichi a,b Kamata, Norihiko b,c

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b SAITAMA UNIVERSITY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; ALGAN QUANTUM WELLS; ALN BUFFER; EXTERNAL QUANTUM EFFICIENCY; HIGH QUALITY; MAXIMUM OUTPUT POWER; MULTIQUANTUM WELLS; PULSED CURRENT INJECTION; RADIATION ANGLE; SAPPHIRE SUBSTRATES; VERTICAL EMISSION;

LIGHT EMISSION; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 77949822749 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.032102 Document Type: Article

Times cited : (104)

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