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Applied Physics Letters

Volumn 84, Issue 4, 2004, Pages 496-498

Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells

(4) Craven, M D a,b Waltereit, P a,b Speck, J S a,b DenBaars, S P a,b

a Santa Barbara (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; QUANTUM WELL WIDTH;

COMPOSITION; DISLOCATIONS (CRYSTALS); ELECTRIC FIELDS; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM THEORY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SOLID STATE LASERS; SUPERLATTICES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242329860 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1638884 Document Type: Article

Times cited : (128)

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