Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Onuma, T ^a   Shibata, T ^b,e   Kosaka, K ^b   Asai, K ^b   Sumiya, S ^b   Tanaka, M ^b   Sota, T ^c   Uedono, A ^d   Chichibu, S F ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NGK INSULATORS LTD   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e Dowa Semiconductor Akita Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CRYSTAL GROWTH; EPILAYERS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OZONE WATER TREATMENT; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; VAPORS;

ALN; ALN FILMS; BOUND EXCITONS; ENERGY DIFFERENCES; EPILAYERS GROWN; EXCITON FINE STRUCTURES; EXCITON-BINDING ENERGIES; FIRST EXCITED STATE; GROUND-STATE; LOW TEMPERATURES; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXIES; OPTICAL REFLECTANCES; THREADING DISLOCATION DENSITIES;

EXCITONS;

EID: 59349120985     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068335     Document Type: Article

References (44)

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