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Volumn 109, Issue 11, 2011, Pages

Analysis of backside-electrode and gate-field-plate effects on buffer-related current collapse in AlGaN/GaN high electron mobility transistors

(3) Horio, Kazushige a Onodera, Hiraku a Nakajima, Atsushi a

a SHIBAURA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DENSITY; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT COLLAPSE; DEEP DONOR; DRAIN LAG; FIELD PLATES; GATE FIELD; TRAPPING EFFECTS; TWO-DIMENSIONAL TRANSIENT;

BUFFER LAYERS; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; GALLIUM NITRIDE; POWER QUALITY; TRANSIENT ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79959460459 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596561 Document Type: Article

Times cited : (38)

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