Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 698-703

  Horio, Kazushige ^a   Tanaka, Toshiya ^b   Itagaki, Keiichi ^c   Nakajima, Atsushi ^d  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^b Toko Denki Corporation   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

Drain lag; GaAs field effect transistor (FET); gate lag; power slump; surface state

Indexed keywords

DRAIN LAG; GAAS; GATE LAG; POWER SLUMP; SURFACE STATE;

DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; PASSIVATION; PLATE METAL; POWER QUALITY; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; TRANSIENT ANALYSIS; TWO DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 79952036518     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2094621     Document Type: Article

References (26)

1. J. C. Huang, G. S. Jackson, S. Shanfield, A. Platzker, P. K. Saledas, and C. Weichert, "An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications," IEEE Trans. Microw. Theory Tech., vol. 41, no. 5, pp. 752-759, May 1993.
2. S. C. Binari, P. B. Klein, and T. E. Kazior, "Trapping effects in GaN and SiC microwave FETs," Proc. IEEE, vol. 90, no. 6, pp. 1048-1058, Jun. 2002. (Pubitemid 43785872)
3. R. E. Leoni, III, J. W. Bao, J. K. Bu, X. Du, M. S. Shirokov, and J. C. M. Hwang, "Mechanism for recoverable power drift in PHEMTs," IEEE Trans. Electron Devices, vol. 47, no. 3, pp. 498-506, Mar. 2000. (Pubitemid 30578379)
4. U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, "GaN-based RF power devices and amplifiers," Proc. IEEE, vol. 96, no. 2, pp. 287-305, Feb. 2008.
5. G. Verzellesi, A. F. Basile, A. Cavallini, A. Castaldini, A. Chini, and C. Canali, "Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs," IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 594-602, Apr. 2005. (Pubitemid 40535887)
6. V. Desmaris, M. Rudzinski, N. Rorsman, P. R. Hageman, P. K. Larsen, H. Zirath, T. C. Rodle, and H. F. F. Jos, "Comparison of the dc and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2413-2417, Sep. 2006. (Pubitemid 46405174)
7. C. Roff, J. Benedikt, P. J. Tasker, D. J.Wallis, K. P. Hilton, J. O. Maclean, D. G. Hayes, M. J. Uren, and T. Martin, "Analysis of DC-RF dispersion in AlGaN/GaN HFETs using RF waveform engineering," IEEE Trans. Electron Devices, vol. 56, no. 1, pp. 13-19, Jan. 2009.
8. K. Horio and T. Yamada, "Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs," IEEE Trans. Electron Devices, vol. 46, no. 4, pp. 648-655, Apr. 1999.
9. Y. Kazami, D. Kasai, and K. Horio, "Numerical analysis of slow-current transients and power compression in GaAs FETs," IEEE Trans. Electron Devices, vol. 51, no. 11, pp. 1760-1764, Nov. 2004.
10. J. M. Tirado, J. L. Sanchez-Rojas, and J. I. Izpura, "Trapping effects in the transient response of AlGaN/GaN HEMT devices," IEEE Trans. Electron Devices, vol. 54, no. 3, pp. 410-417, Mar. 2007. (Pubitemid 46502193)
11. M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini, "Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 55, no. 7, pp. 1592-1602, Jul. 2008.
12. K. Horio and A. Nakajima, "Physical mechanism of buffer-related current transients and current slump in AlGaN/GaN high electron mobility transistors," Jpn. J. Appl. Phys., vol. 47, no. 5, pp. 3428-3433, May 2008.
13. K. Asano, Y. Miyoshi, K. Ishikura, Y. Nashimoto, M. Kuzuhara, and M. Mizuta, "Novel high power AlGaAs/GaAs HFET with a fieldmodulating plate operated at 35 V drain voltage," in IEDM Tech. Dig., 1998, pp. 59-62.
14. A. Wakejima, K. Ota, K. Matsunaga, and M. Kuzuhara, "A GaAs-based field-modulating plate HFET with improved WCDMA peak-outputpower characteristics," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1983-1987, Sep. 2003.
15. Y.-F.Wu, A. Saxler,M.Moore, R. P. Smith, S. Sheppard, P.M. Chavarkar, T.Wisleder, U. K.Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
16. N. Pala, X. Hu, J. Deng, J. Yang, R. Gaska, Z. Yang, A. Koudymov, M. S. Shur, and G. Simin, "Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs," Solid State Electron., vol. 52, no. 8, pp. 1217-1220, Aug. 2008.
17. C.-L. Chen, "Breakdown of overlapping-gate GaAs MESFETs," IEEE Trans. Electron Devices, vol. 43, no. 4, pp. 535-542, Apr. 1996. (Pubitemid 126768157)
18. S. Karmalkar and U. K. Mishra, "Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate," IEEE Trans. Electron Devices, vol. 48, no. 8, pp. 1515-1521, Aug. 2001. (Pubitemid 32732725)
19. S. Karmalkar, M. S. Shur, G. Simin, and M. A. Khan, "Field-plate engineering for HFETs," IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2534-2540, Dec. 2005. (Pubitemid 41824832)
20. W. Saito, T. Nitta, Y. Kakiuchi, Y. Saito, K. Tsuda, I. Omura, and M. Yamaguchi, "Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized fieldplate structure," IEEE Trans. Electron Devices, vol. 54, no. 8, pp. 1825-1830, Aug. 2007. (Pubitemid 47249816)
21. A. Brannick, N. A. Zakhleniuk, B. K. Ridley, J. R. Shealy, W. J. Schaff, and L. F. Eastman, "Influence of field plate on the transient operation of the AlGaN/GaN HEMT," IEEE Electron Device Lett., vol. 30, no. 5, pp. 436-438, May 2009.
22. A. Nakajima, K. Itagaki, and K. Horio, "Physical mechanism of bufferrelated lag and current collapse in GaN-based FETs and their reduction by introducing a field plate," in Proc. 2009 IEEE Int. Rel. Phys. Symp., Montreal, Canada, 2009, pp. 722-726.
23. K. Horio, A. Nakajima, and K. Itagaki, "Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs," Semicond. Sci. Technol., vol. 24, no. 8, pp. 085 022-1-085 022-7, Aug. 2009.
24. T. Tanaka, K. Itagaki, A. Nakajima, and K. Horio, "Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs," in Proc. Eur. Microw. Integr. Circuits Conf., Rome, Italy, 2009, pp. 164-167.
25. H. H. Wieder, "Surface Fermi level of III-V compound semiconductordielectric interfaces," Surf. Sci., vol. 132, no. 1-3, pp. 390-405, 1983.
26. K. Horio and Y. Fuseya, "Two-dimensional simulations of drain-current transients in GaAs MESFETs with semi-insulating substrates compensated by deep levels," IEEE Trans. Electron Devices, vol. 41, no. 8, pp. 1340-1346, Aug. 1994.