Breakdown of overlapping-gate GaAs MESFETs

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 535-542

  Chen, Chang Lee ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC FIELDS; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICA;

BREAKDOWN FIELD STRENGTH; DRAIN EDGE; GATE BREAKDOWN MECHANISM; OVERLAPPING GATE; SCHOTTKY CONTACT GATE;

MESFET DEVICES;

EID: 0030129218     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485534     Document Type: Article

References (10)

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