Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 59-62

  Asano, K ^a   Miyoshi, Y ^a   Ishikura, K ^a   Nashimoto, Y ^a   Kuzuhara, M ^a   Mizuta, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0032276823     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)