Physical mechanism of buffer-related current transients and current slump in AlGaN/GaN high electron mobility transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3428-3433

  Horio, Kazushige ^a   Nakajima, Atsushi ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Current slump; Drain lag; GaN; Gate lag; HEMT; Trap; Two dimensional analysis

Indexed keywords

ATOMS; BUFFER LAYERS; DRAIN CURRENT; ELECTRIC CURRENTS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; TRANSIENT ANALYSIS; TRANSISTORS; TWO DIMENSIONAL;

CURRENT SLUMP; DRAIN LAG; GAN; GATE LAG; HEMT; TRAP; TWO-DIMENSIONAL ANALYSIS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 52649127199     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3428     Document Type: Article

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