Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate

IEEE Transactions on Microwave Theory and Techniques

Volumn 52, Issue 11, 2004, Pages 2536-2540

  Okamoto, Yasuhiro ^a   Ando, Yuji ^a   Hataya, Koji ^a,b   Nakayama, Tatsuo ^a   Miyamoto, Hironobu ^a   Inoue, Takashi ^a   Senda, Masanobu ^c   Hirata, Koji ^c   Kosaki, Masayoshi ^c   Shibata, Naoki ^c   Kuzuhara, Masaaki ^a,d  

^a NEC CORPORATION   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

^c Toyoda Gosei Co Ltd   (Japan)

^d UNIVERSITY OF FUKUI   (Japan)

Author keywords

Field effect transistor (FET); Field modulating plate (FP); GaN; Recess

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; ION IMPLANTATION; MICROWAVES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

CONTACT RESISTANCE; ELECTRON TRAPPING; FIELD MODULATING PLATE; RECESS;

FIELD EFFECT TRANSISTORS;

EID: 9244233313     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.837159     Document Type: Conference Paper

References (14)

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