Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs

Semiconductor Science and Technology

Volumn 24, Issue 8, 2009, Pages

  Horio, Kazushige ^a   Nakajima, Atsushi ^a   Itagaki, Keiichi ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; BUFFER-TRAPPING EFFECTS; CURRENT COLLAPSE; DEEP DONOR; DRAIN LAG; FIELD PLATES; FIELD-PLATE STRUCTURES; GATE LAG; MESFETS; OPTIMUM THICKNESS; PASSIVATION LAYER; PULSED CURRENTS; SEMI-INSULATING BUFFER; TWO-DIMENSIONAL TRANSIENT;

BUFFER LAYERS; DRAIN CURRENT; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; PASSIVATION; PLATES (STRUCTURAL COMPONENTS); SEMICONDUCTING GALLIUM; SILICON NITRIDE; TRANSIENT ANALYSIS;

ELECTRIC CURRENT MEASUREMENT;

EID: 68949105714     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085022     Document Type: Article

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