Effect of buffer layer structure on drain leakage current and current collapse phenomena in high-voltage GaN-HEMTs

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1371-1376

  Saito, Wataru ^a   Noda, Takao ^a   Kuraguchi, Masahiko ^a   Takada, Yoshiharu ^a   Tsuda, Kunio ^a   Saito, Yasunobu ^a   Omura, Ichiro ^b   Yamaguchi, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; High voltage; High electron mobility transistor (HEMT); Power semiconductor device

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE; APPLIED VOLTAGES; BUFFER LAYER STRUCTURES; CURRENT COLLAPSE; D ELECTRONS; DRAIN LEAKAGE CURRENT; EDGE DISLOCATION; EDGE DISLOCATION DENSITY; ELECTRON TRAPPING; GAN; GAN LAYERS; HETEROSTRUCTURES; HIGH VOLTAGE; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); ON-RESISTANCE; POTENTIAL BARRIERS; POWER SEMICONDUCTOR DEVICE; SCREW DISLOCATIONS;

BUFFER LAYERS; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DC GENERATORS; DEFECT DENSITY; DISLOCATIONS (CRYSTALS); DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SOLIDS; STRESS INTENSITY FACTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67650147974     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2021367     Document Type: Article

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