Study of leakage mechanism and trap density in porous low-k materials

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 549-555

  Gischia, Gianni Giai ^a,b   Croes, Kristof ^a   Groeseneken, Guido ^a,b   Tokei, Zsolt ^a   Leuven, K U ^c,c   Afanas'ev, Valery ^c   Zhao, Larry ^d  

^a IMEC   (Belgium)

^b ESAT Department   (Belgium)

^c Department of Physics and Astronomy ^*  (Belgium)

^d Intel Corporation Belgium   (Belgium)

Author keywords

Conduction mechanism; Leakage current; Low k; Trap density

Indexed keywords

CONDUCTION MECHANISM; EXPERIMENTAL DATA; FOWLER-NORDHEIM TUNNELING; INTRINSIC PROPERTY; LEAKAGE MECHANISM; LOW-K; LOW-K MATERIALS; PLANAR CAPACITORS; POOLE-FRENKEL EMISSION; POROUS LOW-K MATERIAL; SCHOTTKY EMISSIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TEST VEHICLE; THEORETICAL PREDICTION; TRAP DENSITY;

CAPACITORS;

LEAKAGE CURRENTS;

EID: 77957921920     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488773     Document Type: Conference Paper

References (13)

1. J.W. Tringe et al., "Temperature-dependent current transport in low-k inorganic dielectrics", Journal of the Electrochemical Society, Vol. 151, pp. F128-F131, no5, 2004.
2. Ou Y. et al., "Conduction Mechanisms of Ta/Porous SiCOH Films under Electrical Bias", Journal of the Electrochemical Society, Vol. 155, no12, 2008.
3. V. Verriere et al., "Dielectric conduction mechanisms of ULK/CU interconnects: Low field conduction mechanism and determination of defect density", IRPS, 2008, pp. 679-680.
4. J. M. Atkin et al., "Photocurrent spectroscopy of low-k dielectric materials: Barrier heights and trap densities", Journal of Applied Phyics, Vol. 103, issue 9, 2008.
5. M. Vilmay et al., "Characterization of low-k SiOCH dielectric for 45 nm technology and link between the dominant leakage path and the breakdown localization", Microelectronic Engineering, Vol. 85, issue 10, October 2008, pp. 2075-2078.
6. L. Zhao et al., "A Novel Test Structure to Study Intrinsic TDDB of Copper/Low-k, IRPS, 2009.
7. L. Zhao et al., "A New Perspective of Barrier Material Evaluation and Process Optimization" IITC, 2009, pp. 206-208.
8. E. Y. Wu et al., "On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques", IEEE Transactions on Electron Devices, Vol. 49, issue 12, 2002, pp. 2131-2140.
9. S. M. Sze, Physics of Semiconductor Devices, Oxford; New York: Wiley, 2006, ch. 4.
10. K. C. Kao, Electrical transport in solids, 1981, Pergamon Press (Oxford, New York).
11. S. Shamuilia et al., "Internal photoemission of electrons at interfaces of metals with low-k insulators", Appl. Phys. Lett. 89, 202909 (2006).
12. 3 Plasma Treatment", Electrochemical and Solide State Letters, Vol. 10, issue 10, 2007, pp. G76-G79.
13. Srivastava, J. K. & Prasad, M. Electrical conductivity of silicon dioxide thermally grown on silicon, J. Electrochem. Soc. 132, 955-963 (1985).